S S Lau

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Vertical and electrically isolated InAs nanowires ͑NWs͒ are integrated with Si in a technique that bypasses structural defects and transport barriers at the Si–III–V NW interface. Smart-cut® technique is used to transfer a thin InAs layer onto SiO 2 / Si and is subsequently used for ordered organometallic vapor phase epitaxy of InAs NWs. The InAs layer in(More)
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