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Si nanowires (NWs) integrated in a field effect transistor device structure are characterized using scanning electron (SEM), atomic force, and scanning Kelvin probe force (KPFM) microscopy. Reactive ion etching (RIE) and vapor-liquid-solid (VLS) growth were used to fabricate NWs between predefined electrodes. Characterization of Si NWs identified defects(More)
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