S. R. Wang

We don’t have enough information about this author to calculate their statistics. If you think this is an error let us know.
Learn More
SrTi<sub>1-x</sub>Nb<sub>x</sub>O<sub>3</sub> films with thickness of about 200 nm on nickel substrate were deposited by magnetron sputtering method. After annealed at 500degC, a hydrogen storage alloy was deposited on the back of the nickel substrate and the SrTi<sub>1-x</sub>Nb<sub>x</sub>O<sub>3</sub>/Ni/hydrogen storage alloy (SNH) electrodes were(More)
Two dielectric relaxation loss peaks associated with oxygen-ion diffusion in the intergrowth Bi2WO6–Bi3TiNbO9sBi5TiNbWO15d bismuth layered ferroelectrics were observed. The activation energy and the relaxation time at infinite temperature, for these two peaks, were determined to be s0.89 eV, 1.3310−13 sd and s0.84 eV, 3.6310−10 sd. The ac impedance(More)
  • 1