S. Oswald

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  • S. A. Rounaghi, H. Eshghi, S. Scudino, A. Vyalikh, D. E. P. Vanpoucke, W. Gruner +5 others
  • 2016
Hexagonal Aluminium nitride (h-AlN) is an important wide-bandgap semiconductor material which is conventionally fabricated by high temperature carbothermal reduction of alumina under toxic ammonia atmosphere. Here we report a simple, low cost and potentially scalable mechanochemical procedure for the green synthesis of nanostructured h-AlN from a powder(More)
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