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Journals and Conferences
The design, fabrication, and characterization of three- and four-stage monolithic GaAs power FET amplifiers are described. Each of the amplifier chips measures 1 mm × 4 mm. Procedures for characterizing these monolithic amplifiers are outlined. Output powers of up to 1 W with 27-dB gain were achieved with a four-stage design near 9 GHz. The circuit… (More)
A 1650 µm gate width GaAs FET with monolithic partial on-chip matching network of the input for broadband operation had 630 mW output power with 4 dB gain from 17 to 20.5 GHz. The pi-gate design includes 13 reactive-ion-etched source vias on a 50 µm substrate with a plated heat sink.
We present the development of thin-film Liquid Crystal Polymer (LCP) surface mount packages with a novel bandpass feedthrough at K-band (18 – 27 GHz). The packages are constructed using multi-layer LCP films and can be surface mounted on a printed circuit board. Our experimental results demonstrate that the bandpass package feedthrough transition… (More)
A GaAs FET amplifier using a 600 mu m gate width device has achieved ~ 300 mW output with 20-25% power-added efficiency across 2 to 18 GHz. With a 1350 mu m FET, 0.5 W output power was obtained from 7 to 16.5 GHz. Extending its large-signal performance to 2 GHz appears feasible.
MHEMT technology using metamorphic buffer layers growing on GaAs substrate can overcome InP substrate issues. Several researchers have demonstrated reliable MHEMT devices, mainly with the drain bias at 1 V. This work, however, demonstrated for the first time MHEMT devices operated at drain voltage greater than 3 V for the amplifier application. We have… (More)
The design of a 6-18-GHz two-stage monolithic feedback amplifier is discussed, and the critical process and FET parameters are identified. Variations in circuit performance experienced during a pilot production run are correlated with the predictions of a sensitivity analysis. Five circuit model parameters were selected for study: substrate height, GaAs… (More)