S. Murakami

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A 3.6-watt 26-GHz band AlGaAs/GaAs heterojunction bipolar transistor (HBT) power amplifier is described. The amplifier is composed of two common-base (CB) HBT chips, and achieves a output power of 3.63 W (35.6 dBm), power-added efficiency (PAE) of 21.2% and associated gain of 6.2 dB with a 1-dB bandwidth between 25.5 and 26.5 GHz. As far as we know, the(More)
We developed a highly sensitive compact chemical sensor system employing a polymer-coated microcantilever sensor array and a thermal preconcentrator. The design, structure, fabrication, and experiment results are reported here. This sensor system had 1) a sub-ppb detection limit concentrated by a preconcentrator and 2) analytical function by thermal(More)
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