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In this work, we use scanning tunneling microscopy (STM) to study the localized degradation, breakdown and post-breakdown of a high-&#x043A; (HK) gate dielectric material, cerium oxide (CeO<inf>2</inf>) deposited directly on a silicon substrate. The novelty of the study lies in analyzing the breakdown phenomenon from a macroscopic metal-oxide-semiconductor(More)
The study of scanning tunneling microscopy (STM) induced localized degradation and polarity dependent breakdown (BD) of HfO<sub>2</sub>/SiO<sub>x</sub> dielectric stacks is presented in this work, together with a correlated investigation of the BD locations by transmission electron microscopy (TEM). The localized dielectric BD events are also analysed using(More)
The study of local Random Telegraphic Noise (RTN) in HfO<sub>2</sub> dielectric blanket films using Scanning Tunneling Microscopy (STM) is presented in this work. Analysis of the trap spectroscopy in the dielectric by low-voltage sensing of RTN signals at different stages of stress induced leakage current (SILC) degradation and subsequent breakdown has been(More)
Survival from melanoma is influenced by several, well-established clinical and histopathological factors, e.g. age, Breslow thickness and microscopic ulceration. We (the Section of Epidemiology and Biostatistics, University of Leeds) have carried out research to better understand the biological basis for these observations. Preliminary results indicated a(More)
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