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We have deposited the MgAl2O4 thin ®lms on Si(1 0 0) substrates in the temperature range of 270 6008C using newly developed single molecular precursors of Mg[(m-OBu)2AlMe2]2 and Mg[Al(O Bu)4]2 by MOCVD. Polycrystalline, crack-free stoichiometric MgAl2O4 thin ®lms were successfully grown on at as low as 4008C. This growth temperature was much lower than that(More)
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