S-J. Chang

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Nanometer size field effect transistors can operate as efficient resonant or broadband terahertz detectors, mixers, phase shifters and frequency multipliers at frequencies far beyond their fundamental cut-of frequency. This work is an overview of some recent results concerning the THz detection by Si MOS transistors with back-gate, low temperatures(More)
While the scaling of MOS transistors is still ongoing, the miniaturization of the DRAM storage capacitor is reaching a critical limit. A promising solution consists of eliminating the capacitor. Instead, the charges can be stored in the floating body of an SOI MOSFET, which is also used to read out the memory states. The floating-body 1T-DRAM takes(More)
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