S. J. Abou-Samra

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This paper addresses three topics: First, a new three-dimensional CMOS-SOI on SOI technology is presented, then design methodologies are proposed for this technology and last, a comparison is carried out between 2D and 3D designs. In this technology the P-channel devices are stacked over the N-channel ones. All gates are l00nm length. New design constraints(More)
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