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A high-quality Ge epilayer on Si has emerged as a viable method to integrate III-V optoelectronics and to achieve high carrier mobility than conventional Si-based CMOS devices. The epilayer quality is often measured by the density of threading dislocations that adversely impact the carrier transport. A number of strategies have been developed in recent(More)
This paper begins by reviewing the recent progress of single and multiple quantum well (SQW and MQW) lasers grown By OMVPE and MBE. Results are then presented of an extensive study of the GRIN-SCH and SCH GaAs/GaAlAs structures, where we have measured the major lasing characteristics, i.e,<tex>J_{TH} T_{O} \lambda and Y_{ext}</tex>, for a wide range of(More)
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