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We report for the first time a CMOS-compatible silicidation technology for surround-gate vertical MOSFETs. The technology uses a double spacer comprising a polysilicon spacer for the surround gate and a nitride spacer for silicidation and is successfully integrated with a Fillet Local OXidation (FILOX) process, which thereby delivers low overlap capacitance(More)
This letter reports a study on the effect of a hydrogen anneal after silicon pillar etch of surround-gate vertical MOSFETs intended for RF applications. A hydrogen anneal at 800°C is shown to give a 30% improvement in the drive current of 120-nm n-channel transistors compared with transistors with out the hydrogen anneal. The value of drive current(More)
An update of validation test results confirming the advanced design nickel-hydrogen cell is presented. An advanced 125 Ah individual pressure vessel (IPV) nickel-hydrogen cell was designed for storing and delivering energy for long-term, low-earth-orbit (LEO) spacecraft missions. The new features of this design are: the use of 26% rather than 31% potassium(More)
  • S. Hall, Z.Y. Wu
  • 27th European Solid-State Device Research…
  • 1997
A vertical MOSFET with 0.1 J.UIl channel length and a SiGe source has been fabricated using a new low temperature process. Details of the process are presented together with electrical characterisation of the devices. The gate oxide is produced by plasma oxidation at < 150°C and an XTEM study demonstrates the lack of orientation dependence of growth and(More)
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