S. G. Thomas

Learn More
We have measured the physical properties and resistivity of nickel germanide thin films formed by the rapid thermal annealing of nickel metal on p-type germanium substrates. Rutherford back scattering and high-resolution electron diffraction confirm that the stoichiometry of the resulting nickel germanide film corresponds to NiGe and has an orthorhombic(More)
This study combines direct measurements of channel strain, electrical mobility measurements and a rigorous modeling approach to provide insight about the strain induced mobility enhancement in FinFETs and guidelines for the device optimization. Good agreement between simulated and measured mobility is obtained using strain components measured directly at(More)
Others have identified three normal operating regions for silicon-on-insulator (SOI) MOSFET's. In two of these regions the threshold voltage depends on the silicon film thickness and the buried insulator thickness. Based on the threshold equations, a method has been developed to nondestructively measure the two film thicknesses. The method uses a feedback(More)
Photodetectors were fabricated in a heteroepitaxial Ge-on-Si deposited by low energy plasma enhanced CVD. Dark current density of 4.6 nA//spl mu/m, 49 % quantum efficiency, and a -3 dB bandwidth of 3.5 GHz were measured at 1.3 /spl mu/m wavelength and -3 V bias. Numerical simulations predict device modifications can achieve 10 Gbps (/spl cong/ 7 GHz)(More)
In this letter, we report the first demonstration of InGaP/GaAs heterojunction bipolar transistors (HBTs) on germanium-on-insulator (GOI) substrates. We have performed physical characterization of the epitaxial layers to verify the high quality of the III-V epitaxial material grown on the GOI substrates and performed dc characterization of large-area(More)
We realized Impact Ionization Nanowire Multiple-gate Field- Effect Transistors (I-MuGFETs or I-FinFETs) having a multiple- gate/nanowire-channel architecture to exploit the superior gate-to- channel coupling for reduced breakdown voltage VBD and enhanced device performance. The first p-channel Impact Ionization MOS transistor (I-MOS) having in situ doped(More)
‘Second harmonic power generation from GaAs-IMPATT diodes at 210GHz’, Int. J. Infrared Millim. Wuves, 1998, 19, (4), pp. 587593 EISELE, H.: ‘Efficient second-harmonic power extraction from GaAs TUNNETT diodes above 200GHz’, Electron. Lett., 1998, 34, (13), pp. 1324-1326 LIEBIG, D., and SCHUNEMANN, K.: ‘Cellular automaton particle simulation and sensitivity(More)
We report the first demonstration of n-channel field-effect transistors (N-FETs) with in situ phosphorus-doped silicon-carbon (SiCP) stressors incorporated in the source/drain extension (SDE) regions. A novel process which formed recessed SDE regions followed by selective epitaxy of SiCP was adopted. High in situ doping contributes to low series resistance(More)
We report the first demonstration of an n-channel transistor (n-FET) featuring a compliant Si<sub>0.75</sub>Ge<sub>0.25</sub> stress transfer layer (STL) and in situ doped Si<sub>0.98</sub>C<sub>0.02</sub> source/drain (S/D) stressors for performance enhancement. Due to the stress coupling between Si<sub>0.98</sub>C<sub>0.02</sub> and the compliant SiGe(More)
We report a new source/drain-extension-last (SDE-last) process flow to incorporate in situ doped and lattice-mismatched source/drain (S/D) stressors extremely close to the channel edge for increased strain and reduced series resistance. This process enables the introduction of S/D stressors with much larger than reported lattice-mismatch at the end of the(More)