S. E. Tyaginov

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We propose and verify a model for hot carrier degradation based on the exhaustive evaluation of the energy distribution function for charge carriers in the channel by means of a full-band Monte-Carlo device simulator. This approach allows us to capture the interplay between “hot” and “colder” electrons and their contribution to(More)
Our physics-based HCD model has been validated using scaled CMOS transistors in our previous work. In this work we apply this model for the first time to a high-voltage nLDMOS device. For the calculation of the degrading behaviour the Boltzmann transport equation solver ViennaSHE is used which also requires high quality adaptive meshing. We discuss the(More)
We discuss and analyze the main features of hot-carrier degradation (HCD) which are a strong localization at the drain-side of the device, the interplay between single- and multiple-particle processes of Si-H bond dissociation, the transition of the worst-case scenario when going from long- to short-channel devices, and its temperature dependence. These(More)
We analyze the impact of oxide thickness variations on hot-carrier degradation. For this purpose, we develop an analytical approximation of our hot-carrier degradation (HCD) model. As this approximation is derived from a physics-based model of HCD, it considers all the essential features of this detrimental phenomenon. Among them are the interplay between(More)
Using a physics-based model for hot-carrier degradation we analyze the worst-case conditions for long-channel transistors of two types: a relatively low voltage n-MOSFET and a high-voltage p-LDMOS. The key issue in the hot-carrier degradation model is the information about the carrier energetical distribution function which allows us to asses the carrier(More)
We show that - in contrast to previous findings - hot-carrier degradation (HCD) in scaled nMOSFETs with a channel length of 44 nm appears to be weaker at elevated temperatures. However, the distance between degradation traces obtained at 25 and 75° C reduces as the stress voltages increase and at a certain voltage the changes of the linear drain(More)
Using our physics-based model for hot-carrier degradation (HCD) we analyze the role of such important processes as the Si-H bond-breakage induced by a solitary hot carrier, bond dissociation triggered by the miltivibrational excitation of the bond, and electron-electron scattering. To check the roles of these mechanisms we use planar CMOS devices with gate(More)
—We propose a new method to determine the lateral position of border traps in MOSFETs. The approach is based on the dependence of the trap-induced threshold voltage shift on the drain bias which is sensitive to the trap position. This follows from the results obtained with both technology computer aided design (TCAD) simulations and with a compact model.(More)
A thorough analysis of charge-pumping extraction techniques for hot-carrier induced defect spatial distribution in MOSFETs has been carried out. We discuss the main features of the existing approaches reflecting upon their shortcomings and applicability limits. For our investigations a new simple and accurate compact model for the MOSFET local oxide(More)
— The McPherson model for the Si-O bond-breakage has been extended in a manner to capture the effect of O-Si-O angle variations on the breakage rate. Using a distribution function of the O-Si-O bond angle, a series of breakage rate probability densities has been calculated as a function of the applied electric field. Using such a distribution function we(More)