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Journals and Conferences
We demonstrate a tunable transmitter, integrating a hybrid III-V/Si laser fabricated by wafer bonding and a silicon Mach-Zehnder modulator. The integrated transmitter exhibits 9 nm wavelength tunability by heating an intra-cavity ring resonator, high extinction ratio from 6 to 10 dB, and excellent bit-error-rate performance at 10 Gb/s.
We report recent experimental results of two kinds of photodetectors developed in the framework of the European project HELIOS: InAlAs-InGaAs metal-semiconductor-metal photodetectors and germanium photodetectors.
A new silicon photonic platform on 310nm thick SOI wafers is presented. Process and layout optimizations for P-i-N ring modulators are described.
Silicon photonics is becoming a technology of choice for optical communications. Compatibility with cmos manufacturing process is one key of success since it allows taking advantage of the production capacities of foundries; i.e. big volume and low cost manufacturability . Germanium is the ideal candidate to build the integrated high performance… (More)
A Full 25GB/S silicon photonics platform is described in this paper, and new technological challenges that aim to improve this platform, such as multiple silicon levels, silicon nitride levels, edge coupling processing or integration of heterogeneous materials to enable tunable integrated lasers, are discussed.