S. Bontemps

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In order to accelerate the ageing of the metallization layer of power semiconductor devices, repetitive short circuit operations are applied to COOLMOS Transistors. Regularly, during repetition of short-circuit operations metallization is observed in a Scanning Electron Microscope which allows us to observe the process of cracking at the grain boundaries of(More)
The paper describes ageing mechanisms of the metallization layer deposited on the chips of power semiconductor devices, and the effects of its ageing on electrical performances of a power transistor. We have tried to link changes in electrical performances to metallization degradation, in order to better understand the origin of the physical mechanisms of(More)
Article history: Received 3 June 2012 Received in revised form 25 June 2012 Accepted 27 June 2012 Available online 16 August 2012 0026-2714/$ see front matter 2012 Elsevier Ltd. A http://dx.doi.org/10.1016/j.microrel.2012.06.121 ⇑ Corresponding author. Tel.: +33 (0)5 56 40 28 04 E-mail address: stephane.azzopardi@ims-bordeaux Silver sintering die-attach(More)
In avionic area, the trend is to a growing use of power electronics systems. In this context, we present results concerning test vehicles (power modules) in order to improve a device assembly technology dedicated to be located "on the engine", in harsh operating conditions with thermal cycling from -50degC to 200degC in the worst case. The paper focuses on(More)
Due to RoHS restrictions, researches on lead-free packaging have increased over the past decade. Low Temperature Joining Techniques (such as silver sintering or Ni-Au Transient Liquid Phase Bonding) are particularly studied because they are processed below 300°C and the attaches obtained are reliable at high temperature. Silver paste sintering(More)
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