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It is well known that n-MOSFET aging under AC and DC Positive Bias Temperature Instability (PBTI) is strongly dependent on the adopted HK stack processes. In this work it is reported, for the first time, a detailed analysis of the nature of the PBTI degradation and recovery under DC and AC conditions by a novel stress and test methodology. Our observations(More)
In this paper, the device degradation enhanced by localized drain self-heating (LDSH) effects at <i>V</i><sub>GS</sub> = <i>V</i><sub>DS</sub> bias condition has been measured and characterized in the pMOSFET transistors of an advanced CMOS HKMG 28-nm bulk technology in both dc (constant voltage) and ac (rectangular pulse) conditions. A comparison with the(More)
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