S. Arulkumaran

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The composition and structure of the pregnancy vaginal microbiome may influence susceptibility to adverse pregnancy outcomes. Studies on the pregnant vaginal microbiome have largely been limited to Northern American populations. Using MiSeq sequencing of 16S rRNA gene amplicons, we characterised the vaginal microbiota of a mixed British cohort of women (n =(More)
This paper presents the low frequency noise investigation of the AlGaN/GaN on silicon Schottky diode. The noise power spectral density of various sizes of the AlGaN/GaN Schottky diodes under different biasing voltages has been measured. The 1/f behaviour is observed before the corner frequency and the effect of the multi-finger contact is also been(More)
High-frequency microwave noise performances (2 GHz to 19 GHz) were investigated on AlGaN/AlN/GaN High Electron Mobility Transistors (HEMTs) with 0.15 &#x03BC;m T-gate fabricated on high resistivity 4-inch Silicon. The HEMTs exhibited maximum drain current density (I<sub>Dmax</sub>) of 830 mA/mm, maximum extrinsic transconductance (g<sub>mmax</sub>) of 353(More)
The I-V characteristics and S-parameters of AlGaN/GaN on silicon Schottky diodes are investigated. A compact circuit model is constructed for RF application. Simulated results are compared with measured results using AlGaN/GaN on Silicon diodes as RF switches. The simulated and measured results illustrated good agreement within a wide frequency range. The(More)
AlGaN/GaN high-electron-mobility-transistors (HEMTs) with 0.8-/spl mu/m- and 0.3 /spl mu/m-gate-length were successfully fabricated on high-resistivity (HR) silicon substrate. The cutoff frequency f/sub T/ values of 7 GHz, 22 GHz and maximum oscillation frequency f/sub max/ values of 23 GHz, 40 GHz were achieved for 0.8-/spl mu/m- and 0.3-/spl(More)
In this work, enhanced noise and linearity performance in 0.25 &#x00B5;m gate-length AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors (MISHEMTs) on high-resistivity silicon substrate using atomic-layer-deposited (ALD) AI2O3 as gate dielectric is reported. High current gain cut-off frequency f<inf>T</inf> above 40 GHz and low(More)
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