S. Anantathanasarn

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This article reviews the recent progress in the growth and device applications of InAs/InP quantum dots (QDs) for telecom applications. Wavelength tuning of the metalorganic vapor-phase epitaxy grown single layer and stacked InAs QDs embedded in InGaAsP/InP (1 0 0) over the 1.55-mm region at room temperature (RT) is achieved using ultra-thin GaAs(More)
Figure 1 : a) Schematic crossbar element, b) Photograph of the fabricated switch matrix. is implemented to interconnect four crossbar switch elements (Figure 1b). The central shuffle network allows any optical input to be directed to any optical output by means of e~ectronic addressing, although not necessarily simultaneously. This blocking behaviour might(More)
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