S. Anantathanasarn

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First observation of passive mode-locking in two-section quantum-dot lasers operating at wavelengths around 1.55 mum is reported. Pulse generation at 4.6 GHz from a 9 mm long device is verified by background-free autocorrelation, RF-spectra and real-time oscilloscope traces. The output pulses are stretched in time and heavily up-chirped with a value of 20(More)
—Passive mode-locking in two-section InAs/InP quantum dot laser diodes operating at wavelengths around 1.55 µm is reported. For a 4.6-GHz laser, a large operating regime of stable mode-locking, with RF-peak heights of over 40 dB, is found for injection currents of 750 mA up to 1.0 A and for values of the ab-sorber bias voltage of 0 V down to −3 V. Optical(More)
This article reviews the recent progress in the growth and device applications of InAs/InP quantum dots (QDs) for telecom applications. Wavelength tuning of the metalorganic vapor-phase epitaxy grown single layer and stacked InAs QDs embedded in InGaAsP/InP (1 0 0) over the 1.55-mm region at room temperature (RT) is achieved using ultra-thin GaAs(More)
Figure 1 : a) Schematic crossbar element, b) Photograph of the fabricated switch matrix. is implemented to interconnect four crossbar switch elements (Figure 1b). The central shuffle network allows any optical input to be directed to any optical output by means of e~ectronic addressing, although not necessarily simultaneously. This blocking behaviour might(More)
In this paper, some of the activities towards the fabrication of photonic integrated circuits at the COBRA Research Institute are summarized. Firstly, rate equations are used for the understanding of instability and dynamics in multilongitudinal mode semiconductor lasers. Secondly, we report the results of our investigation on broad-bandwidth frequency comb(More)
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