S. Anantathanasarn

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This article reviews the recent progress in the growth and device applications of InAs/InP quantum dots (QDs) for telecom applications. Wavelength tuning of the metalorganic vapor-phase epitaxy grown single layer and stacked InAs QDs embedded in InGaAsP/InP (1 0 0) over the 1.55-mm region at room temperature (RT) is achieved using ultra-thin GaAs(More)
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