S. A. Dayeh

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We present new fundamental insights into the nucleation and evolution of InAs nanowires (NWs) grown using organo-metallic vapor-phase epitaxy (OMVPE), the correlation of their room temperature transport behavior with their structural properties, and a novel scheme for their integration to Si substrates. We experimentally distinguish, for the first time, two(More)
We have used scanning capacitance microscopy (SCM) and spectroscopy (SCS) to examine the effects of micron- scale metal contacts, typically present in nanowire-based electronic devices, on carrier modulation and electrostatic behavior in InAs semiconductor nanowires. We observe a pronounced dependence of scanning capacitance images and spectra on distance(More)
The authors have used scanning gate microscopy combined with numerical simulations to analyze local carrier and current modulation effects in InAs semiconductor nanowires grown by metal-organic chemical vapor deposition. Measurements of current flow in the nanowire as a function of probe tip position, at both high and low drain bias, reveal that carrier and(More)
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