Søren Jensen

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BACKGROUND Microsatellite instability (MSI) refers to mutations in short motifs of tandemly repeated nucleotides resulting from replication errors and deficient mismatch repair (MMR). Colorectal cancer with MSI has characteristic biology and chemosensitivity, however the molecular basis remains unclarified. The association of MSI and MMR status with outcome(More)
The outstanding charge transport properties of graphene enable numerous electronic applications of this remarkable material, many of which are expected to operate at ultrahigh speeds. In the regime of ultrafast, sub-picosecond electric fields, however, the very high conduction properties of graphene are not necessarily preserved, with the physical picture(More)
We present a comparative study of the ultrafast photoconductivity in two different forms of one-dimensional (1D) quantum-confined graphene nanostructures: structurally well-defined semiconducting graphene nanoribbons (GNRs) fabricated by a "bottom-up" chemical synthesis approach and semiconducting carbon nanotubes (CNTs) with a similar bandgap energy.(More)
While the field of plasmonics has grown significantly in recent years, the relatively high losses and limited material choices have remained a challenge for the development of many device concepts. The decay of plasmons into hot carrier excitations is one of the main loss mechanisms; however, this process offers an opportunity for the direct utilization of(More)
  • Martin Mittendorff, Josef Kamann, Jonathan Eroms, Dieter Weiss, Christoph Drexler, Sergey D Ganichev +196 others
  • 2015
Graphene has unique optical and electronic properties that make it attractive as an active material for broadband ultrafast detection. We present here a graphene-based detector that shows 40-picosecond electrical rise time over a spectral range that spans nearly three orders of magnitude, from the visible to the far-infrared. The detector employs a large(More)
We present a micro electromechanical tunable capacitor with a low control voltage, a wide tuning range and adequate electrical quality factor. The device is fabricated in a single-crystalline silicon layer using deep reactive ion etching (DRIE) for obtaining high-aspect ratio (> 20) parallel combdrive structures with vertical sidewalls. The process sequence(More)
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