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  • P. Chevalier, G. Avenier, +43 authors B. Borot
  • Physics
  • IEEE International Electron Devices Meeting
  • 2014 (First Publication: 1 December 2014)
  • This paper presents the first 55 nm SiGe BiCMOS technology developed on a 300 mm wafer line in STMicroelectronics. The technology features Low Power (LP) and General Purpose (GP) CMOS devices andExpand
  • Eleftherios G. Ioannidis, Christoforos G. Theodorou, Sébastien Haendler, Emmanuel Josse, Charalabos A. Dimitriadis, Gérard Ghibaudo
  • Chemistry
  • IEEE Electron Device Letters
  • 2015 (First Publication: 11 March 2015)
  • In this letter, we demonstrate the existence of the source-drain series resistance mismatch and its impact on drain current variability with regard to the other mismatch parameters. To this end, weExpand
  • Eleftherios G. Ioannidis, Christoforos G. Theodorou, Theano A. Karatsori, Sébastien Haendler, Charalabos A. Dimitriadis, Gérard Ghibaudo
  • Physics
  • IEEE Transactions on Electron Devices
  • 2015 (First Publication: 18 March 2015)
  • Extensive investigation of the drain-current low-frequency noise in n-channel MOSFETs issued from a 14-nm fully depleted silicon-on-insulator technology node has been carried out. The resultsExpand