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This paper refers to properties of silicon carbide Schottky diodes at high values of their internal temperature. The investigated diode was elaborated at Warsaw University of Technology. Characteristics of this diode were measured at different cooling conditions in wide range of dissipated power. At each operating point the value of the internal temperature(More)
One of the key problems for more efficient use of conventionally PCBs is plated through holes, because they consume a large fraction of PCB surface area. One of the solutions that can permit to save the PCB surface is using of blind and buried vias. Currently, many expensive plating and sequential lamination steps create the blind/buried vias. Electrically(More)
Silicon carbide (SiC) semiconductor diodes are studied for high power and high temperature system applications. Our packaging technology is developing to ensure a working temperature above 300°C for Schottky and PIN diodes. This work presents an investigation on the thermal properties of proposed assembly of SiC die into a ceramic package. Ag micro(More)
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