Ryosuke Shimidzu

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Three different type strained-Si substrates, EPI, SGOI and SSOI, were evaluated by newly developed high-resolution UV-Raman spectroscopy. The structure relaxation occurred by RTA at 1050/spl deg/C. The Raman peak shifted toward larger wavenumber after RTA for SSOI, indicating strain relaxation. The peak shifted toward lower wavenumber in the case of EPI due(More)
We have developed a high-throughput deep-ultraviolet (DUV) Raman microspectrometer with excitation from a continuous wave (cw) laser operated at 244 nm that enables us to characterize thin surface layers of wide-gap semiconductors. This spectrometer system consists of a filter spectrometer for the rejection of stray light and a high-dispersion spectrograph(More)
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