Ryoichi Ishihara

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Single-grain (SG) thin-film transistors (TFTs) fabricated inside location-controlled silicon grains using the -Czochralski method are benchmarked for analog and RF applications. Each silicon grain is defined by excimer laser recrystallization of polysilicon. Thin-film transistors may be fabricated in this manner on silicon or low-cost flexible plastic(More)
The transient properties of single grain–thin film transistors SG-TFTs with high electron mobility have been studied. Overshoot current induced by trap states has been observed in most of the devices. A method of ac measurements has been used to investigate the trap processes. Both transient and ac measurements show that the response of some SG-TFTs with(More)
We proposed the world's first flexible ultrathin-body single-photon avalanche diode (SPAD) as photon counting device providing a suitable solution to advanced implantable bio-compatible chronic medical monitoring, diagnostics and other applications. In this paper, we investigate the Geiger-mode performance of this flexible ultrathin-body SPAD(More)
Carbon nanotubes (CNT) can be an attractive candidate for vertical interconnects in 3D monolithic integration, due to their excellent thermal and electrical properties. In this paper we investigate the use of a true bottom-up approach to fabricate CNT vias, for application in 3D monolithic integration. This circumvents metal deposition in high aspect ratio(More)
This article describes the development of an Electronic Paper display. This E-Paper display will use the μCzochralski Single Grain Thin-Film Transistor Technology for driving a Quick-Response Liquid Power Display. The display driver will be integrated on the display itself. The display is flexible, including the driving electronics. Technology used offers(More)
CMOS poly-Si thin-film transistors (TFTs) were fabricated through crystallization and GILD processes by a novel selected area laser assisted (SALA) system. The system enables a local area irradiation of small beams of a pulsed solid-state laser of frequency tripled Nd:YAG. The novel TFT process eliminated 3 doping mask steps of the conventional process.(More)
We studied pulsed laser induced epitaxy of silicon using a seeding wafer to realize location-and orientation-control of silicon grain. Silicon grains as large as 4 &#x00B5;m &#x00D7; 4 &#x00B5;m with mostly the preferred (100) orientation area were obtained on top of contact openings through SiO<inf>2</inf> to seeding silicon (100) wafer. The orientation of(More)
Amorphous-Si thin-film-transistors (TFT) which require a lower process temperature compared to IC technology permit use of large area glass substrates and have been used for digital X-ray detection. However, because of the low field effect mobility (1 cm/Vs) and high trap density, image lag problem exists. Poly-Si TFTs improve mobility but due to existence(More)