Ryoichi Ishihara

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—Single-grain (SG) thin-film transistors (TFTs) fabricated inside location-controlled silicon grains using the-Czochralski method are benchmarked for analog and RF applications. Each silicon grain is defined by excimer laser recrys-tallization of polysilicon. Thin-film transistors may be fabricated in this manner on silicon or low-cost flexible plastic(More)
—This article describes the development of an Electronic Paper display. This E-Paper display will use the µ-Czochralski Single Grain Thin-Film Transistor Technology for driving a Quick-Response Liquid Power Display. The display driver will be integrated on the display itself. The display is flexible, including the driving electronics. Technology used offers(More)
SUMMARY We review our recent achievements in monolithic 3D-ICs and flexible electronics based on single-grain Si TFTs that are fabricated inside a single-grain with a low-temperature process. Based on pulsed-laser crystallization and submicron sized cavities made in the substrate, amorphous-Si precursor film was converted into poly-Si having grains that are(More)
We review our achievement in monolithic 3D-ICs based on single-grain Si TFTs that are fabricated inside a single-grain with a low-temperature process. With pulsed-laser crystallization, Si grains with a diameter of 6 μm are successfully formed on predetermined positions. Single-grain (SG) Si TFTs are fabricated inside the single-grain with mobility(More)
—Carbon nanotubes (CNT) can be an attractive candidate for vertical interconnects in 3D monolithic integration, due to their excellent thermal and electrical properties. In this paper we investigate the use of a true bottom-up approach to fabricate CNT vias, for application in 3D monolithic integration. This circumvents metal deposition in high aspect ratio(More)
We studied pulsed laser induced epitaxy of silicon using a seeding wafer to realize location-and orientation-control of silicon grain. Silicon grains as large as 4 &#x00B5;m &#x00D7; 4 &#x00B5;m with mostly the preferred (100) orientation area were obtained on top of contact openings through SiO<inf>2</inf> to seeding silicon (100) wafer. The orientation of(More)
SUMMARY CMOS poly-Si thin-film transistors (TFTs) were fabricated through crystallization and GILD processes by a novel selected area laser assisted (SALA) system. The system enables a local area irradiation of small beams of a pulsed solid-state laser of frequency tripled Nd:YAG. The novel TFT process eliminated 3 doping mask steps of the conventional(More)