Ryoichi Ishihara

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—Single-grain (SG) thin-film transistors (TFTs) fabricated inside location-controlled silicon grains using the-Czochralski method are benchmarked for analog and RF applications. Each silicon grain is defined by excimer laser recrys-tallization of polysilicon. Thin-film transistors may be fabricated in this manner on silicon or low-cost flexible plastic(More)
—This article describes the development of an Electronic Paper display. This E-Paper display will use the µ-Czochralski Single Grain Thin-Film Transistor Technology for driving a Quick-Response Liquid Power Display. The display driver will be integrated on the display itself. The display is flexible, including the driving electronics. Technology used offers(More)
SUMMARY CMOS poly-Si thin-film transistors (TFTs) were fabricated through crystallization and GILD processes by a novel selected area laser assisted (SALA) system. The system enables a local area irradiation of small beams of a pulsed solid-state laser of frequency tripled Nd:YAG. The novel TFT process eliminated 3 doping mask steps of the conventional(More)
A study on the impact of atomic layer deposition (ALD) precursors diffusion on the performance of solid-state miniaturized nanostructure capacitor array is presented. Three-dimensional nanostructured capacitor array based on double conformal coating of multiwalled carbon nanotubes (MWCNTs) bundles is realized using ALD to deposit Al2O3 as dielectric layer(More)
SUMMARY We review our recent achievements in monolithic 3D-ICs and flexible electronics based on single-grain Si TFTs that are fabricated inside a single-grain with a low-temperature process. Based on pulsed-laser crystallization and submicron sized cavities made in the substrate, amorphous-Si precursor film was converted into poly-Si having grains that are(More)
We demonstrate a method for the low temperature growth (350 °C) of vertically-aligned carbon nanotubes (CNT) bundles on electrically conductive thin-films. Due to the low growth temperature, the process allows integration with modern low-κ dielectrics and some flexible substrates. The process is compatible with standard semiconductor fabrication, and a(More)
Thin film transistors (TFTs) were fabricated inside a location-controlled, large Si grains through an advanced excimer-laser crystallization with a low temperature process. The field-effect mobility for electrons of the single-grain Si TFTs was as high as 597 cm <sup>2</sup>/Vs. CMOS inverters are fabricated inside the location-controlled grain. Propagation(More)
We proposed the world's first flexible ultrathin-body single-photon avalanche diode (SPAD) as photon counting device providing a suitable solution to advanced implantable bio-compatible chronic medical monitoring, diagnostics and other applications. In this paper, we investigate the Geiger-mode performance of this flexible ultrathin-body SPAD(More)