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SUMMARY This paper presents measurement of on-chip coupling between PA and LNA integrated on Si CMOS substrate, which is caused by substrate coupling, magnetic coupling, power-line coupling, etc. These components are decomposed by measurements using diced chips. The result reveals that the substrate coupling is the most dominant in CMOS chips and the total(More)
—This paper presents a 60-GHz direct-conversion RF front-end and baseband transceiver including analog and digital circuitry for PHY functions. The 65-nm CMOS front-end consumes 319 and 223 mW in transmitting and receiving mode, respectively. It is capable of more than 7-Gb/s 16QAM wireless communication for every channel of the 60-GHz standards, which can(More)
— This paper presents a 16QAM direct-conversion transceiver in 65 nm CMOS, which is capable of 60-GHz wireless standards. The capacitive cross-coupling neutralization contributes a high common-mode rejection and a high reverse isolation, and a fully-balanced mixer can improve the error vector magnitude due to the reduced local leakage. The maximum data(More)
—This paper proposes the method of varactor cross-couplng with adaptive bias. The capacitive cross-coupling neu-tralization contributes to improve power gain and reverse isolation. The optimized capacitance of cross-coupled PA depends heavily on the input power. Thus, the varacter is used and adaptive bias is obtained by the feedback of the input power. The(More)
— This paper presents a 60-GHz direct-conversion transceiver using 60-GHz quadrature oscillators. The 65nm CMOS transceiver realizes the IEEE802.15.3c full-rate wireless communication for every 16QAM/8PSK/QPSK/BPSK mode. The maximum data rates with an antenna built in a package are 8 Gbps in QPSK mode and 11 Gbps in 16QAM mode within a BER of < 10 −3. The(More)
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