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This paper describes a method for connecting an MOSFET 2-D device simulator to a circuit simulator via a 3-D table look-up MOSFET model. The computational cost of the device simulator is drastically reduced by a proposed monotonic piecewise cubic interpolation technique. With this technique, the device simulator needs to calculate only 100 ~ 200 points to(More)
A threshold voltage model for small geometry fully depleted Silicon-On-Insulator (SOI MOSFET), based on the numerical solution of three dimensional Poisson's equation is presented in this paper. Liebmann's iteration method was used to solve the three dimensional Poisson's equation with necessary boundary conditions. By using the solution of(More)
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