Ruwei Zhao

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Using high-quality single-layer graphene as a saturable absorber, Tm:YAlO₃ (Tm:YAP) crystal as the gain medium, we demonstrated a laser-diode-pumped, compact, passively Q-switched (PQS) solid-state laser in the 2 μm region. The maximum average output power was 362 mW, with the corresponding largest pulse repetition rate and pulse energy of 42.4 kHz and 8.5(More)
In this Letter, a high-quality, few-layered black phosphorus (BP) saturable absorber (SA) was fabricated successfully, and a femtosecond solid-state laser modulated by BP-SA was experimentally demonstrated for the first time, to the best of our knowledge. Pulses as short as 272 fs were achieved with an average output power of 0.82 W, corresponding to the(More)
A high-quality black phosphorus (BP) saturable-absorber mirror (SAM) was successfully fabricated with the multi-layered BP, prepared by liquid-phase exfoliation (LPE) method. The modulation depth and saturation power intensity of BP absorber were measured to be 10.7% and 0.96 MW/cm(2), respectively. Using the BP-SAM, we experimentally demonstrated the(More)
High-quality black phosphorus (BP) saturable absorber mirror (SAM) was successfully fabricated with few-layered BP (phosphorene). By employing the prepared phosphorene SAM, we have demonstrated ultrafast pulse generation from a BP mode-locked bulk laser for the first time to our best knowledge. Pulses as short as 6.1 ps with an average power of 460 mW were(More)
By using few-layer black phosphorus (BP) as saturable absorber, an efficient mode-locked Nd:GdVO4 bulk laser operating at 1.34 μm was realized. An average output power of 350 mW was achieved with a slope efficiency of 15%. The corresponding mode-locking pulse repetition rate, pulse duration and pulse energy were 58.14 MHz, 9.24 ps and 3.0 nJ, respectively.(More)
A diode-pumped passively continuous wave mode-locked laser at 1064.2 nm based on an ordered Nd:CNGS crystal has been experimentally investigated (for the first time, to our knowledge). Stable mode-locked pulses with a duration of 759 fs were produced at a repetition rate of 43.2 MHz. It is the shortest pulse generation of mode-locked lasers based on(More)
A diode-pumped passively continuous-wave mode-locked Nd:(La(x)Gd(1-x))3Ga5O12 (Nd:LaGGG) laser at 1062.4 nm with a semiconductor saturable absorber mirror was demonstrated for the first time, to the best of our knowledge. Pulses with duration of 12.78 ps were produced at a repetition rate of 59.8 MHz. A maximum average mode-locked output power of 3.18 W was(More)
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