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There is an urgent requirement for an optical emitter that is compatible with standard, silicon-based ultra-large-scale integration (ULSI) technology. Bulk silicon has an indirect energy bandgap and is therefore highly inefficient as a light source, necessitating the use of other materials for the optical emitters. However, the introduction of these(More)
—An all-optical 2R regenerator that consists of an ion implanted InGaAsP multiple-quantum-well saturable absorber, a nonlinear fiber, and an optical filter is presented. Error-free 10-Gb/s transmission over 7000 km of standard fiber with an amplifier spacing of 80 km is demonstrated in a recirculating loop experiment.
An Indium Phosphide-based device, switched by telecommunication wavelength laser pulses capable of operating at microwave frequencies up to 15 GHz has been designed and fabricated. Initial results confirm that using high energy nitrogen ion implantation to create EL-2 type trapping levels produces a photocarrier recombination time of a few picoseconds. The(More)
From measurements over the last two years we have demonstrated that the charge collection system based on Faraday cups can robustly give near-1% absolute implantation fluence accuracy for our electrostatically scanned 200 kV Danfysik ion implanter, using four-point-probe mapping with a demonstrated accuracy of 2%, and accurate Rutherford backscattering(More)
We report on photoluminescence in the 1.7-2.1 μm range of silicon doped with thulium. This is achieved by the implantation of Tm into silicon that has been codoped with boron to reduce the thermal quenching. At least six strong lines can be distinguished at 80 K; at 300 K, the spectrum is dominated by the main emission at 2 μm. These emissions are(More)
In this work we experimentally demonstrate laser erasable germanium implanted Bragg gratings in SOI. Bragg gratings are formed in a silicon waveguide by ion implantation induced amorphization, and are subsequently erased by a contained laser thermal treatment process. An extinction ratio up to 24dB has been demonstrated in transmission for the fabricated(More)
Recommended by Pavel Cheben The refractive index modulation associated with the implantation of oxygen or silicon into waveguides formed in silicon-on-insulator (SOI) has been investigated to determine the feasibility of producing planar, implantation induced Bragg grating optical filters. A two-dimensional coupled mode theory-based simulation suggests that(More)
Magnesium diboride, MgB2, has a relatively high superconducting transition temperature, placing it between the families of low- and high-temperature (copper oxide based) superconductors. Supercurrent flow in MgB2 is unhindered by grain boundaries, making it potentially attractive for technological applications in the temperature range 20-30 K. But in the(More)
Carrier-type reversal to enable the formation of semiconductor p-n junctions is a prerequisite for many electronic applications. Chalcogenide glasses are p-type semiconductors and their applications have been limited by the extraordinary difficulty in obtaining n-type conductivity. The ability to form chalcogenide glass p-n junctions could improve the(More)
Reaction order in Bi-doped oxide glasses depends on the optical basicity of the glass host. Red and NIR photoluminescence (PL) bands result from Bi(2+) and Bin clusters, respectively. Very similar centers are present in Bi- and Pb-doped oxide and chalcogenide glasses. Bi-implanted and Bi melt-doped chalcogenide glasses display new PL bands, indicating that(More)