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There is an urgent requirement for an optical emitter that is compatible with standard, silicon-based ultra-large-scale integration (ULSI) technology. Bulk silicon has an indirect energy bandgap and is therefore highly inefficient as a light source, necessitating the use of other materials for the optical emitters. However, the introduction of these(More)
—An all-optical 2R regenerator that consists of an ion implanted InGaAsP multiple-quantum-well saturable absorber, a nonlinear fiber, and an optical filter is presented. Error-free 10-Gb/s transmission over 7000 km of standard fiber with an amplifier spacing of 80 km is demonstrated in a recirculating loop experiment.
From measurements over the last two years we have demonstrated that the charge collection system based on Faraday cups can robustly give near-1% absolute implantation fluence accuracy for our electrostatically scanned 200 kV Danfysik ion implanter, using four-point-probe mapping with a demonstrated accuracy of 2%, and accurate Rutherford backscattering(More)
We report on photoluminescence in the 1.7-2.1 μm range of silicon doped with thulium. This is achieved by the implantation of Tm into silicon that has been codoped with boron to reduce the thermal quenching. At least six strong lines can be distinguished at 80 K; at 300 K, the spectrum is dominated by the main emission at 2 μm. These emissions are(More)
Recommended by Pavel Cheben The refractive index modulation associated with the implantation of oxygen or silicon into waveguides formed in silicon-on-insulator (SOI) has been investigated to determine the feasibility of producing planar, implantation induced Bragg grating optical filters. A two-dimensional coupled mode theory-based simulation suggests that(More)
—We report a monolithically integrated InGaAsP DBR ridge waveguide laser that uses the quantum-confined Stark effect (QCSE) to achieve fast tuning response. The laser incorporates three sections: a forward-biased gain section, a reverse-biased phase section, and a reverse-biased DBR tuning section. The laser behavior is modeled using transmission matrix(More)
An atomistic model of the growth kinetics of stressed solid-solid phase transformations is presented. Solid phase epitaxial growth of (001) Si was used for comparison of new and prior models with experiments. The results indicate that the migration of crystal island ledges in the growth interface may involve coordinated atomic motion. The model accounts for(More)
—The use of multiple quantum well (MQW) saturable absorbers (SAs) for signal regeneration in periodically amplified fiber transmission systems is explored. A systematic study of signal destabilization resulting from incomplete saturation of MQW SAs used for regeneration, and of means of overcoming such destabilization , is presented. A computer model for(More)
Magnesium diboride, MgB2, has a relatively high superconducting transition temperature, placing it between the families of low- and high-temperature (copper oxide based) superconductors. Supercurrent flow in MgB2 is unhindered by grain boundaries, making it potentially attractive for technological applications in the temperature range 20-30 K. But in the(More)