Runze Zhan

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Tantalum etched by H 2 O 2 solution shows best performance to be the source/drain electrodes of inverted staggered amorphous Indium Gallium Zinc Oxide thin film transistors among the investigated five metal materials. In addition, the etching property is improved significantly by adding aqueous ammonia properly. 1. Introduction Amorphous oxide semiconductor(More)
In situ characterization of the work function of quasi one dimensional nanomaterials is essential for exploring their applications. Here we proposed to use the electrostatic deflection induced by work function difference between nanoprobe and nanowire for in situ measuring the local work function along a free standing nanowire. The physical mechanism for(More)
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