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We demonstrated a flexible resistive random access memory device through a low-temperature atomic layer deposition process. The device is composed of an HfO2/Al2O3-based functional stack on an indium tin oxide-coated polyethylene terephthalate substrate. After the initial reset operation, the device exhibits a typical bipolar, reliable, and reproducible(More)
We previously reported that LeMYB1 might be a crucial transcription factor in regulating shikonin formation in Lithospermum erythrorhizon. In this study, by overexpressing LeMYB1 under the control of CaMV35S promoter in L. erythrorhizon hairy roots, we further clarified the role of LeMYB1 in the shikonin formation and its regulation. The(More)
Resistive random access memory (RRAM) has been widely investigated. However, for the applications in flexible electronics, this type of memory is not so widely investigated for its requirement of the low processing temperature. In this paper, we demonstrated an Al<sub>2</sub>O<sub>3</sub>-based FRRAM fabricated under low temperature, and improved its(More)
Hafnium silicate-based Metal Oxide Semiconductor (MOS) capacitors were fabricated by atomic layer deposition. The interface evolution of the films with forming gas annealing was investigated. It is found that most of the slow interface states were passivated through Forming Gas Annealing (FGA), and the D<sub>it</sub> in the center of the band gap was(More)
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