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Composite right/left-handed (CRLH) transmission line structures based on the folded substrate integrated waveguide (FSIW) are presented and discussed in this paper. This FSIW-based CRLH (FSIW-CRLH) transmission line exhibits much lower cut-off frequencies as compared to the ordinary FSIW of the same footprint, and furthermore, it requires only one-half(More)
Inductors are essential components of radio frequency integrated circuits (RFICs). While the active devices in RF systems downscale steadily, inductors have not been able to keep up with the pace of continual miniaturization because of the trade-off between size and performance as well as fabrication complexity. Strain-induced self-rolled-up nanotechnology(More)
Accurate modeling of electrothermal effects of GaN electronic devices is critical for reliability design and assessment. In this paper, an electrothermal model for large signal equivalent circuit modeling of AlGaN/GaN HEMTs including self-heating and ambient temperature effects is presented. To accurately describe the effect of ambient temperature, two(More)
Statistical model of semiconductor field effect device is important for yield analysis. In this paper, the large signal statistical characterization of GaN HEMTs is modeled based on empirical equivalent circuit model. First, the parameters of small signal and large signal equivalent circuit model are extracted by in-house extraction program based on 10(More)
A microwave tunable substrate integrated waveguide bandpass filter using nematic liquid crystals is researched in this paper combined with the complementary split-ring resonators. The nematic liquid crystal is used to control the corresponding working frequency, with its permittivity changing caused by deflection angle of the liquid crystal molecules. And(More)
This paper presents an accurate analytical surface-potential-based compact model for AlGaN/GaN HEMTs for SPICE-like circuit simulation. Considering the important energy level E<sub>0</sub>, an easy-implemented analytical continuous expression for the fermi level position Ef was deduced to obtain the surface potential(SP) &#x03C6;s. Then analytical core(More)
A Ka-band monolithic frequency quadrupler with high conversion gain and efficient rejection of undesired harmonics based on 0.15um GaAs PHEMT process is presented in this paper. The quadrupler is constructed cascading an input power amplifier, a one-stage active quadrupling part and an amplifier of the fourth harmonic. Input power amplifier with one stage(More)
In this paper we present an accurate and robust small-signal equivalent circuit model(SSECM) for GaN/AlGaN HEMTs. To extend the operating frequency, a flexible equivalent circuit network for parasitic parameters is proposed. The equivalent circuit network is constructed by a number of (N) seriate equivalent resist, inductance and capacitance (Rn-Ln-Cn),(More)