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RAPD (random amplified polymorphic DNA) markers were used to fingerprint eight commercially available apple rootstocks (Nertchinsk, Northern Spy, Osman, Heyer 12, M.1, M.9, M.26 and MM.106), 10 winter hardy offsprings derived from the cross of Nertchinsk x M.9, six winter hardy offsprings derived from the cross of Nertchinsk x M.26 and one winter hardy(More)
AIM To estimate the effect of a multimodal prevention program on controlling surgical site infection (SSI) risk among neurosurgical patients. MATERIAL AND METHODS This prospective study was conducted among adult patients who have undergone neurosurgical procedures in a tertiary-care university-affiliated hospital during January 2008 to December 2013 since(More)
γ-Alumina nanoparticles (γ-Al2O3) were introduced to the conventional poly(methacrylic acid-co-ethylene glycol dimethacrylate) (MAA-co-EGDMA) monolith to prepare a novel organic-inorganic hybrid monolith, poly(MAA-co-EGDMA)-Al2O3 monolith. The polymerization was induced in-situ with UV irradiation in an ultraviolet transparent polymethyl methacrylate (PMMA)(More)
A nanocrystal memory using CoSi 2 /Si hetero-nanocrystals as floating gate was proposed. Numerical investigations on the writing, erasing and retention were performed. The hetero-structure provides an extra quantum well for the charge to achieve much longer retention time while maintains a writing/erasing speed similar to that of Si nanocrystal memory.
Simulations of threshold voltage shift of a p-channel Ge/Si heteronanocrystal floating gate memory device were carried out using both a numerical two-dimensional Poisson–Boltzmann method and an equivalent circuit model. The results show that the presence of a Ge dot on top of a Si dot significantly prolongs the retention time of the device, indicated by the(More)
The titanium silicide/silicon ͑TiSi 2 /Si͒ heteronanocrystals are fabricated on SiO 2 thin films. The metal-oxide-semiconductor structure embedding the TiSi 2 / Si heteronanocrystals shows superior performance over the Si dot device. The charge loss rate in the TiSi 2 / Si heteronanocrystal device is 7.5 times less than that of the Si dot device. It is also(More)
In this paper we propose a method for broadband achromatic and passive athermal optical system design using a combination of three doublets. In the implementation of this method, the first-order color dispersion is corrected by distributing proper power to the elements inside the doublets; the thermal and secondary color dispersion are corrected by(More)