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This paper proposes the characterization, parameter estimation, and modeling of a monolithic cascade, which has been called emitter-switching bipolar transistor (ESBT), suitable for high-voltage applications. Such an innovative device composes of a high-voltage power BJT and low-voltage power MOSFET that are connected in cascade connection, with the MOSFET(More)
An improved converter for low power and wide range input voltage, which is particularly suitable for auxiliary uses in three-phase grid of industrial applications, is studied. A flyback quasi-resonant topology has been chosen, which offers the good characteristics of high voltage operations and good efficiency. A comparison is performed among available(More)
Recently available on the market the emitter switched bipolar transistor (ESBT) having high voltage breakdown, low voltage drop, and low switching losses as well, represents an interesting alternative to other power transistors thus giving a new chance to further improve the system efficiency. This paper deals with a new silicon technology used to produce a(More)
In this paper several driving circuits allowing the optimal feeding of the base of a cascode device are presented. More traditional driving circuits suitable for a cascode device are efficient as long as the collector current is high and quasi constant. However in certain applications such as PFCs. where the collector current changes between zero and higher(More)
We discuss the simulation of monolithic mode-locked semiconductor laser diodes (MLLD) and the design and measurement of its key element, the saturable absorber. We demonstrate the necessity of a fast absorber for sub ps pulse generation by distributed time domain simulations of the pulse formation. As a result a uni-travelling-carrier (UTC) structure is(More)
In this paper an experimental investigation of the performances of a cascode monolithic device in a half bridge configuration is carried out, and a comparison is performed in the same converter in case IGBT devices are used. The device behavior during the reverse current conduction in the inverter leg is investigated and discussed. The experimental evidence(More)
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