Rongtian Zhang

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3-Dimensional (3-D) integration offers numerous advantages over conventional structures. Double-gate (DG) transistors can be fabricated for better device characteristics, and multiple device layers can be vertically stacked for better interconnect performance. In this paper, we explore the suitable device structures and interconnect architectures for(More)
Ahsrrucr-3-D technology promises higher integration density and lower interconnection complexity and delay. At present, however, not much work on circuit applications has been done due to lack of insight into 3-D circuit architecture and performance. One of the purposes of realizing 3-D integration b to reduce the interconnect complexity and delay of 2-D,(More)
Abstruct-3-D technology promises higher integration density and lower intercon-nection complexity and delay. At present, however, not much work on circuit applications has been done due to lack of insight into 3-D circuit architecture and performance. One of the purposes of realizing 3-D integration is to reduce the interconnect complexity and delay of 2-D,(More)
Double-gate fully-depleted (DGFD) SOI circuits are regarded as the next generation VLSI circuits. This paper investigates the impact of scaling on the demand and challenges of DGFD SOI circuit design for low power and high performance. We study how the added back-gate capacitance affects the circuit power and performance ; how to trade off the enhanced(More)
3-D technology promises higher integration density and lower in-terconnection complexity and delay. At present, however, not much work on circuit applications has been done due to lack of insight into 3-D circuit architecture and performance. In this paper, we investigate the interconnect distributions of 3-D circuits. We divide the 3-D interconnects into(More)
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