Ronen A. Berechman

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Ti interdiffusion from the Ti/Pt/Au gate into the AlGaAs Schottky barrier layer (SBL) of 0.25-lm GaAs Pseudomorphic High Electron Mobility Transistors (PHEMTs) has been studied using the accelerated life testing technique. Based on measurements and modeling, analytical expressions for quantitative correlation between the positive pinch-off voltage (VP)(More)
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