Ronald G. Wilson

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AlN epilayers grown by metalorganic chemical vapor deposition were implanted with cobalt ions and studied by deep UV photoluminescence ͑PL͒. A PL emission peak at 5.87 eV ͑at 10 K͒ was observed for the Co-implanted AlN epilayers, which was absent in as-grown AlN epilayers. Temperature dependence of the PL intensity of the 5.87 eV emission line revealed an(More)
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