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Worldwide efforts are underway to integrate semiconductors and magnetic materials, aiming to create a revolutionary and energy-efficient information technology in which digital data are encoded in the spin of electrons. Implementing spin functionality in silicon, the mainstream semiconductor, is vital to establish a spin-based electronics with potential to(More)
A hybrid structure of a ferromagnetic Co/ Au/ Ni 81 Fe 19 trilayer on p-type silicon is used to probe the excitation of electron-hole pairs in a ferromagnet during inelastic decay of hot electrons and the subsequent spin-dependent transport of the excited holes into the valence band of the p-type Si collector. The hole current is remarkably sensitive to(More)
The tunnel momentum distribution in a ͑magnetic͒ tunnel junction is probed by analyzing the decay of the hot electrons in the Co metal anode after tunneling, using a three-terminal transistor structure in which the hot-electron attenuation is sensitive to the tunnel momentum distribution. Solid state amorphous Al 2 O 3 barriers and the vacuum barrier of a(More)
The control and manipulation of the electron spin in semiconductors is central to spintronics, which aims to represent digital information using spin orientation rather than electron charge. Such spin-based technologies may have a profound impact on nanoelectronics, data storage, and logic and computer architectures. Recently it has become possible to(More)
Magnetic tunnel junctions have become ubiquitous components appearing in magnetic random-access memory, read heads of magnetic disk drives and semiconductor-based spin devices. Inserting a tunnel barrier has been key to achieving spin injection from ferromagnetic (FM) metals into GaAs, but spin injection into Si has remained elusive. We show that Schottky(More)
Heat generation by electric current, which is ubiquitous in electronic devices and circuits, raises energy consumption and will become increasingly problematic in future generations of high-density electronics. The control and re-use of heat are therefore important topics for existing and emerging technologies, including spintronics. Recently it was(More)
Spin-dependent electronic transport is widely used to probe and manipulate magnetic materials and develop spin-based devices. Spin-polarized tunnelling, successful in ferromagnetic metal junctions, was recently used to inject and detect electron spins in organics and bulk GaAs or Si. Electric field control of spin precession was studied in III-V(More)
Spin currents are paramount to manipulate the magnetization of ferromagnetic elements in spin-based memory, logic and microwave devices, and to induce spin polarization in non-magnetic materials. A unique approach to create spin currents employs thermal gradients and heat flow. Here we demonstrate that a thermal spin current can be tuned conveniently by a(More)
The magnetic anisotropy of epitaxial La 0.67 Sr 0.33 MnO 3 ͑LSMO͒ thin films on vicinal, TiO 2-terminated SrTiO 3 substrates is investigated. Atomic force microscopy shows a regular step-terrace structure on the LSMO surface which is a replication of the surface of the substrate. The films show in-plane uniaxial magnetic anisotropy at room temperature, with(More)
The observation of the anomalous Hall effect ͑AHE͒ in Co-doped TiO 2 ferromagnetic semiconductor in the anatase phase is reported. An AHE is observed with magnetic hysteresis consistent with remanence and coercivity obtained from magnetometry data. The anatase films also have reasonable mobility ͑ϳ17 cm 2 /V s͒ at room temperature and carrier density of ϳ5(More)