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Trends in VLSI technology scaling demand that future computing devices be narrowly focused to achieve high performance and high efficiency, yet also target the high volumes and low costs of widely applicable general purpose designs. To address these conflicting requirements, we propose a modular reconfigurable architecture called Smart Memories, targeted at(More)
Scaling trends of logic, memories, and interconnect networks lead towards dense many-core chips. Unfortunately, process yields and reticle sizes limit the scalability of large single-chip systems. Multi-chip systems break free of these areal limits, but in turn require enormous chip-to-chip bandwidth. The "macrochip" concept presented here integrates(More)
We present circuits for a high-efficiency low-swing interconnect scheme suitable for the Smart Memories reconfigurable architecture. By using a separate supply, global clocking, and differential signaling, we reduce design complexity; and by using overdrive circuits, equalization techniques, and senseamplifiers we retain high performance. A testchip built(More)
Hyperthreaded(HT) and simultaneous multithreaded (SMT) processors are now available in commodity workstations and servers. This technology is designed to increase throughput by executing multiple concurrent threads on a single physical processor. These multiple threads share the processor’s functional units and on-chip memory hierarchy in an attempt to make(More)
This paper describes a half-swing pulse-mode gate family that uses reduced input signal swing without sacrificing performance. These gates are well suited for decreasing the power in SRAM decoders and write circuits by reducing the signal swing on high-capacitance predecode lines, write bus lines, and bit lines. Charge recycling between positive and(More)
We report the first sub-picojoule per bit (400fJ/bit) operation of a silicon modulator intimately integrated with a driver circuit and embedded in a clocked digital transmitter. We show a wall-plug power efficiency below 400microW/Gbps for a 130nm SOI CMOS carrier-depletion ring modulator flip-chip integrated to a 90nm bulk Si CMOS driver circuit. We also(More)