Roman A Babunts

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We discovered a family of uniaxially oriented silicon vacancy-related centers with S=3/2 in a rhombic 15R-SiC crystalline matrix. We demonstrate that these centers exhibit unique characteristics such as optical spin alignment up to the temperatures of 250°C. Thus, the range of robust optically addressable vacancy-related spin centers is extended to the wide(More)
D. Simin, V. A. Soltamov, A. V. Poshakinskiy, A. N. Anisimov, R. A. Babunts, D. O. Tolmachev, E. N. Mokhov, M. Trupke, S. A. Tarasenko, A. Sperlich, P. G. Baranov, V. Dyakonov, and G. V. Astakhov Experimental Physics VI, Julius-Maximilian University of Würzburg, 97074 Würzburg, Germany Ioffe Physical-Technical Institute, 194021 St. Petersburg, Russia Vienna(More)
Shallow electron centers, self-trapped holes and self-trapped excitons in small AgC1 crystals embedded in KC1 matrix were investigated by optical spectroscopy, optically detected magnetic resonance (ODMR), and electron paramagnetic resonance (EPR) techniques. These investigations showed that single AgC1 microcrystals are formed in KC1 crystalline matrix(More)
Recombination processes leading to the tunnelling afterglow and photostimulated luminescence in systems based on host ionic crystals with impurity-related nanostructures-promising phosphors for x-ray storage-were studied by means of luminescence, EPR and optically detected magnetic resonance. It was found that in the x-ray irradiated CsBr:Eu and CsBr:Pb(More)
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