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iii Abstract In early 2010, the Long-Baseline Neutrino Experiment (LBNE) science collaboration initiated a study to investigate the physics potential of the experiment with a broad set of different beam, near-and far-detector configurations. Nine initial topics were identified as scientific areas that motivate construction of a long-baseline neutrino(More)
This document summarizes the work of the Accelerator Working Group (AWG) of the International Scoping Study (ISS) of a Future Neutrino Factory and Superbeam Facility. The main goal of the activity was to reach consensus on a baseline design for a Neutrino Factory complex, including proton driver parameters, choice of target, front-end design, acceleration(More)
The Silicon Tracker/Converter of the Gamma-ray Large Area Space Telescope (GLAST) will have an active area of 80 m, representing one of the largest planned applications of the silicon-strip detector technology. The large number of channels (1.3 million) to read out, together with the requirement that the tracker provide the trigger to the data acquisition,(More)
—This paper discusses the dynamic error characteristics of touch trigger probes used with coordinate measuring machines. During the investigation, a number of important parameters have been identified, including measurement speed, probe longitude, approach distance, probe latitude, stylus length/stylus tip diameter, probe orientation, operating mode(More)
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NoblePeak Vision is developing a new night vision technology based on visible to short-wave infrared (SWIR) imaging. Imaging in this band is important because of the "night glow", light emitted by the night sky between 1 mum and 2 mum wavelength. The night glow provides sufficient illumination to allow passive imaging even under moonless overcast(More)
The COM2 Enhanced Graded Base SiGe modular BiCMOS technology has been developed. It is based on the COM2 digital CMOS process. The technology achieves peak Ft=100 GHz, peak Fmax=101 GHz, peak /spl beta/=186 and BVcex=2.05 V. Ft-BVcex product of 205 and good across wafer uniformity are demonstrated.
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