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We demonstrate a nanoscale, subpicosecond (ps) metamaterial device capable of terabit/second all-optical communication in the near-IR. The 600 fs response, 2 orders of magnitude faster than previously reported, is achieved by accessing a previously unused regime of high-injection level, subpicosecond carrier dynamics in the alpha-Si dielectric layer of the… (More)
This bibliography lists publications and papers and talks presented or published by RLE faculty, staff, and students during 1998, and each section is in alphabetical order by author's name. Section 1 is a list of papers and talks; copies of these papers may be obtained by contacting the authors directly. Section 2 lists journal articles that were published… (More)
We demonstrate an ultrafast (600 fs) dual-band optical switching device using a negative-index metamaterial. A large switching ratio is achieved at both the fundamental (70%) and higher order coupling bands (20%) of the negative-index resonance.
The production of ultrashort laser pulses continues to be a very active field of research. This technology has found applications in the areas of biomedical optics, high speed communications, and the investigation of ultrafast nonlinear processes in semiconductor materials and devices. Generally, these laser sources aim to be cost effective, robust, and… (More)
We present the first ultrafast time-resolved, polarization-dependent experiments on both single- and ensemble-silicon nanowires using non-degenerate spectroscopy. Anisotropy was observed for polarizations perpendicular and parallel to the nanowire.
We use ultrafast optical microscopy to investigate carrier dynamics in single flakes of atomically thin molybdenum disulfide. By tuning the probe wavelength through the bandgap, we reveal the influence of layer thickness on carrier dynamics.
Ultrafast differential transmission spectroscopy is used to explore temperature-dependent carrier dynamics in an InAs/InGaAs quantum dots-in-a-well heterostructure. Electron-hole pairs are optically injected into the three dimensional GaAs barriers, after which we monitor carrier relaxation into the two dimensional InGaAs quantum wells and the zero… (More)
The mechanisms producing strong coupling between electric and magnetic order in multiferroics are not always well understood, since their microscopic origins can be quite different. Hence, gaining a deeper understanding of magnetoelectric coupling in these materials is the key to their rational design. Here, we use ultrafast optical spectroscopy to show… (More)