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—Si/SiGe resonant interband tunnel diodes (RITDs) employing-doping spikes that demonstrate negative differential resistance (NDR) at room temperature are presented. Efforts have focused on improving the tunnel diode peak-to-valley current ratio (PVCR) figure-of-merit, as well as addressing issues of manufacturability and CMOS integration. Thin SiGe layers(More)
—The electronic structure and transmission coefficients of Si nanowires are calculated in a 3 5 model. The effect of wire thickness on the bandgap, conduction valley splitting, hole band splitting, effective masses, and transmission is demonstrated. Results from the 3 5 model are compared to those from a single-band effective mass model to assess the(More)
—We present the characteristics of uniformly doped silicon Esaki tunnel diodes grown by low temperature molecular beam epitaxy (= 275 C) using in situ boron and phosphorus doping. The effects of ex situ thermal annealing are presented for temperatures between 640 and 800 C. A maximum peak to valley current ratio (PVCR) of 1.47 was obtained at the optimum(More)
Non-equilibrium Green function theory is formulated to meet the three main challenges of high bias quantum device modeling: self-consistent charging, incoherent and inelastic scattering, and band structure. The theory is written in a general localized orbital basis using the example of the zinc blende lattice. A Dyson equation treatment of the open system(More)
Resonant tunneling through double barrier graphene systems: A comparative study of Klein and non-Klein tunneling structures PAMELA: An open-source software package for calculating nonlocal exact exchange effects on electron gases in core-shell nanowires AIP Advances 2, 032173 (2012) Tunable electronic transport characteristics through an AA-stacked bilayer(More)
Simulation of trap-assisted tunneling effect on characteristics of gallium nitride diodes Tuning of terahertz intrinsic oscillations in asymmetric triple-barrier resonant tunneling diodes Repeatable low-temperature negative-differential resistance from Al0.18Ga0.82N/GaN resonant tunneling diodes grown by molecular-beam epitaxy on free-standing GaN(More)
Graphene exhibits extraordinary electrical properties and is therefore often envisioned to be the candidate material for post-silicon era as Silicon technology approaches fundamental scaling limits. Various Graphene based electronic devices and interconnects have been proposed in the past. In this paper, we explore the possibility of a hybrid fabric between(More)
An integrated tunnel diode/transistor process can be used to increase the speed of signal processing circuitry or reduce power at the same speed; in memory applications, tunnel diodes can be used to reduce static power dissipation (>20× in Si, >1000× in III-V materials) relative to conventional approaches. This paper summarizes recent progress in InP and(More)
We report on an eKcient numerical technique for directly locating transmission resonances and zeros in semiconductor heterostructures using tight-binding multiband models. The quantum transmitting boundary method is employed to generate the inverse of the retarded Green's function G (E) in. the tight-binding representation. The poles of G (E) are located.(More)
Graphene is an emerging nano-material that has garnered immense research interest due to its exotic electrical properties. It is believed to be a potential candidate for post-Si nanoelectronics due to high carrier mobility and extreme scalability. Recently, a new graphene nanoribbon crossbar (xGNR) device was proposed which exhibits negative differential(More)