Roger K. Lake

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Non-equilibrium Green function theory is formulated to meet the three main challenges of high bias quantum device modeling: self-consistent charging, incoherent and inelastic scattering, and band structure. The theory is written in a general localized orbital basis using the example of the zinc blende lattice. A Dyson equation treatment of the open system(More)
Potentially toxic organic compounds, acids, metals and radionuclides in the northern polar region are a matter of concern as it becomes evident that long-range transport of pollution on hemispheric to global scales is damaging this part of the world. In this review and assessment of sources, occurrence, history and pathways of these substances in the north,(More)
Si/SiGe resonant interband tunnel diodes (RITDs) employing -doping spikes that demonstrate negative differential resistance (NDR) at room temperature are presented. Efforts have focused on improving the tunnel diode peak-to-valley current ratio (PVCR) figure-of-merit, as well as addressing issues of manufacturability and CMOS integration. Thin SiGe layers(More)
A potential remediation technique for groundwater contaminated by bromate has been investigated, utilising biological bromate reduction to bromide by augmentation of indigenous microbial populations. This technique, involving addition of a carbon source to contaminated groundwater, is being developed as an ex-situ methodology analogous to commercial(More)
Biological molecules such as deoxyribonucleic acid (DNA) possess inherent recognition and self-assembly capabilities, and are attractive templates for constructing functional hierarchical material structures as building blocks for nanoelectronics. Here we report the assembly and electronic functionality of nanoarchitectures based on conjugates of(More)
Related Articles Ultra-thin titanium oxide Appl. Phys. Lett. 101, 083113 (2012) Influence of doping on the electronic transport in GaSb/InAs(Sb) nanowire tunnel devices Appl. Phys. Lett. 101, 043508 (2012) Simulation of trap-assisted tunneling effect on characteristics of gallium nitride diodes J. Appl. Phys. 111, 123115 (2012) Tuning of terahertz intrinsic(More)
Graphene exhibits extraordinary electrical properties and is therefore often envisioned to be the candidate material for post-silicon era as Silicon technology approaches fundamental scaling limits. Various Graphene based electronic devices and interconnects have been proposed in the past. In this paper, we explore the possibility of a hybrid fabric between(More)
Related Articles Ultra-thin titanium oxide Appl. Phys. Lett. 101, 083113 (2012) Influence of doping on the electronic transport in GaSb/InAs(Sb) nanowire tunnel devices Appl. Phys. Lett. 101, 043508 (2012) Simulation of trap-assisted tunneling effect on characteristics of gallium nitride diodes J. Appl. Phys. 111, 123115 (2012) Tuning of terahertz intrinsic(More)
Graphene is an emerging nano-material that has garnered immense research interest due to its exotic electrical properties. It is believed to be a potential candidate for post-Si nanoelectronics due to high carrier mobility and extreme scalability. Recently, a new graphene nanoribbon crossbar (xGNR) device was proposed which exhibits negative differential(More)
A number of the charge-density-wave materials reveal a transition to the macroscopic quantum state around 200 K. We used graphene-like mechanical exfoliation of TiSe(2) crystals to prepare a set of films with different thicknesses. The transition temperature to the charge-density-wave state was determined via modification of Raman spectra of TiSe(2) films.(More)