Learn More
Non-equilibrium Green function theory is formulated to meet the three main challenges of high bias quantum device modeling: self-consistent charging, incoherent and inelastic scattering, and band structure. The theory is written in a general localized orbital basis using the example of the zinc blende lattice. A Dyson equation treatment of the open system(More)
—Si/SiGe resonant interband tunnel diodes (RITDs) employing-doping spikes that demonstrate negative differential resistance (NDR) at room temperature are presented. Efforts have focused on improving the tunnel diode peak-to-valley current ratio (PVCR) figure-of-merit, as well as addressing issues of manufacturability and CMOS integration. Thin SiGe layers(More)
Resonant tunneling through double barrier graphene systems: A comparative study of Klein and non-Klein tunneling structures PAMELA: An open-source software package for calculating nonlocal exact exchange effects on electron gases in core-shell nanowires AIP Advances 2, 032173 (2012) Tunable electronic transport characteristics through an AA-stacked bilayer(More)
Graphene exhibits extraordinary electrical properties and is therefore often envisioned to be the candidate material for post-silicon era as Silicon technology approaches fundamental scaling limits. Various Graphene based electronic devices and interconnects have been proposed in the past. In this paper, we explore the possibility of a hybrid fabric between(More)
Simulation of trap-assisted tunneling effect on characteristics of gallium nitride diodes Tuning of terahertz intrinsic oscillations in asymmetric triple-barrier resonant tunneling diodes Repeatable low-temperature negative-differential resistance from Al0.18Ga0.82N/GaN resonant tunneling diodes grown by molecular-beam epitaxy on free-standing GaN(More)
The effects of interface roughness scattering in a resonant-tunneling diode are examined with the self-consistent Born and the multiple sequential scattering algorithm for various interface roughness correlation lengths. The effect of a self-consistent treatment of the scattering self-energies with the quantum charge and the electrostatic and(More)
Graphene is an emerging nano-material that has garnered immense research interest due to its exotic electrical properties. It is believed to be a potential candidate for post-Si nanoelectronics due to high carrier mobility and extreme scalability. Recently, a new graphene nanoribbon crossbar (xGNR) device was proposed which exhibits negative differential(More)
Graphene revealed a number of unique properties beneficial for electronics. However, graphene does not have an energy band-gap, which presents a serious hurdle for its applications in digital logic gates. The efforts to induce a band-gap in graphene via quantum confinement or surface functionalization have not resulted in a breakthrough. Here we show that(More)
Patterning of biomolecules on graphene layers could provide new avenues to modulate their electrical properties for novel electronic devices. Single-stranded deoxyribonucleic acids (ssDNAs) are found to act as negative-potential gating agents that increase the hole density in single-layer graphene. Current-voltage measurements of the hybrid ssDNA/graphene(More)
A number of the charge-density-wave materials reveal a transition to the macroscopic quantum state around 200 K. We used graphene-like mechanical exfoliation of TiSe 2 crystals to prepare a set of films with different thicknesses. The transition temperature to the charge-density-wave state was determined via modification of Raman spectra of TiSe 2 films. It(More)