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Non-equilibrium Green function theory is formulated to meet the three main challenges of high bias quantum device modeling: self-consistent charging, incoherent and inelastic scattering, and band structure. The theory is written in a general localized orbital basis using the example of the zinc blende lattice. A Dyson equation treatment of the open system(More)
—Si/SiGe resonant interband tunnel diodes (RITDs) employing-doping spikes that demonstrate negative differential resistance (NDR) at room temperature are presented. Efforts have focused on improving the tunnel diode peak-to-valley current ratio (PVCR) figure-of-merit, as well as addressing issues of manufacturability and CMOS integration. Thin SiGe layers(More)
Biological molecules such as deoxyribonucleic acid (DNA) possess inherent recognition and self-assembly capabilities, and are attractive templates for constructing functional hierarchical material structures as building blocks for nanoelectronics. Here we report the assembly and electronic functionality of nanoarchitectures based on conjugates of(More)
Graphene exhibits extraordinary electrical properties and is therefore often envisioned to be the candidate material for post-silicon era as Silicon technology approaches fundamental scaling limits. Various Graphene based electronic devices and interconnects have been proposed in the past. In this paper, we explore the possibility of a hybrid fabric between(More)
The electronic and thermoelectric properties of one to four monolayers of MoS2, MoSe2, WS2, and WSe2 are calculated. For few layer thicknesses, the near degeneracies of the conduction band K and Σ valleys and the valence band Γ and K valleys enhance the n-type and p-type thermoelectric performance. The interlayer hybridization and energy level splitting(More)
Simulation of trap-assisted tunneling effect on characteristics of gallium nitride diodes Tuning of terahertz intrinsic oscillations in asymmetric triple-barrier resonant tunneling diodes Repeatable low-temperature negative-differential resistance from Al0.18Ga0.82N/GaN resonant tunneling diodes grown by molecular-beam epitaxy on free-standing GaN(More)
Simulation of trap-assisted tunneling effect on characteristics of gallium nitride diodes Tuning of terahertz intrinsic oscillations in asymmetric triple-barrier resonant tunneling diodes Repeatable low-temperature negative-differential resistance from Al0.18Ga0.82N/GaN resonant tunneling diodes grown by molecular-beam epitaxy on free-standing GaN(More)
A number of the charge-density-wave materials reveal a transition to the macroscopic quantum state around 200 K. We used graphene-like mechanical exfoliation of TiSe(2) crystals to prepare a set of films with different thicknesses. The transition temperature to the charge-density-wave state was determined via modification of Raman spectra of TiSe(2) films.(More)
The effects of interface roughness scattering in a resonant-tunneling diode are examined with the self-consistent Born and the multiple sequential scattering algorithm for various interface roughness correlation lengths. The effect of a self-consistent treatment of the scattering self-energies with the quantum charge and the electrostatic and(More)
Patterning of biomolecules on graphene layers could provide new avenues to modulate their electrical properties for novel electronic devices. Single-stranded deoxyribonucleic acids (ssDNAs) are found to act as negative-potential gating agents that increase the hole density in single-layer graphene. Current-voltage measurements of the hybrid ssDNA/graphene(More)