Robert P. Sarzala

Learn More
In the present paper the results of the computer analysis of the arsenide-based (GaInNAs/AlGaInAs) and antimonide-based (GaInAsSb/AlGaAsSb) active regions emitting in the mid-infrared wavelength region are presented. Quantum well material contents and strain dependencies on the maximal gain are investigated. It is shown that above 3 μm the maximal(More)
In the talk a new automated and self-consistent approach to modeling photonic devices is presented. Is is based on a new software being developed at Lodz University of Technology and its main idea is automated consideration of mutual interactions between various physical phenomena taking place in photonic devices. The software consists of several solvers(More)
This paper presents a comprehensive numerical study on the surface relief technique implemented in nitride Vertical-Cavity Surface-Emitting Laser (VCSEL) emitting in the 414-nm range. We calculated the threshold currents and optical modes in VCSEL structures with and without a surface relief. A standard structure was based on the first continuous-wave(More)
In this work results of a threshold operation of antimonide-based tunnel-junction (TJ) VCSEL have been presented with the aid of the comprehensive fully self-consistent optical-electrical-thermal-recombination numerical model. Calculations have been carried out for the structure with GaInAsSb/GaSb active region emitting at 2.6 μm. In order to(More)
For many applications of Vertical-Cavity Surface-Emitting Lasers (VCSELs) it is important to obtain high power of emitted light. Due to the laser thermal properties that limit maximum current density in the active region, high power emission requires large laser apertures. This results in appearance of multiple transverse optical modes, which very often are(More)
In the paper we present results of our simulations of the influence of pumping beam parameters on power transfer characteristics of an optically pumped vertical-external-cavity surface-emitting laser (VECSEL). Calculations have been done with the aid of the comprehensive, fully self-consistent numerical model developed by our group. The research has focused(More)
Paper presents results of our numerical simulation of an operation of the GaInNAs/GaAs vertical-external-cavity surface-emitting lasers (VECSELs) emitting the 1.3-μm radiation. Thermal properties of two various VECSEL assembly configurations have been compared with the aid of the finite-element-method model. Moreover, optical properties of resonant(More)
Vertical-cavity surface-emitting diode lasers (VCSELs) exhibit excellent performance characteristic: they are principally single-longitudinal-mode devices and their circular optical beam is low divergent and without astigmatism. These virtues, however, are limited in standard VCSELs to relatively low outputs because of an excitation of higher-order(More)
We present analysis of AlInGaAs VCSEL array and analyze the influence of shallow etching, distance between the emitters and gain distribution on the modes discrimination. As a result we determine the optimal parameters assuring stable, single mode operation.