Robert P. Sarzala

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In the present paper the results of the computer analysis of the arsenide-based (GaInNAs/AlGaInAs) and antimonide-based (GaInAsSb/AlGaAsSb) active regions emitting in the mid-infrared wavelength region are presented. Quantum well material contents and strain dependencies on the maximal gain are investigated. It is shown that above 3 μm the maximal(More)
In the talk a new automated and self-consistent approach to modeling photonic devices is presented. Is is based on a new software being developed at Lodz University of Technology and its main idea is automated consideration of mutual interactions between various physical phenomena taking place in photonic devices. The software consists of several solvers(More)
In this work results of a threshold operation of antimonide-based tunnel-junction (TJ) VCSEL have been presented with the aid of the comprehensive fully self-consistent optical-electrical-thermal-recombination numerical model. Calculations have been carried out for the structure with GaInAsSb/GaSb active region emitting at 2.6 μm. In order to(More)
Three methods to obtain in GaAs-based oxide-confined GaInNAs/GaAs quantum-well (QW) VCSELs an efficient emission of the 1.3-µm radiation have been analysed and compared with the aid of the comprehensive fully self-consistent model. In the tuned VCSEL, QW composition (high N content) and thickness are selected to tune the 1.3-µm emission which(More)
For four years now, we have been conducting “medium-scale” experiments in how human subjects behave in strategic and economic settings mediated by an underlying social network structure. We have explored a wide range of networks inspired by generative models from the literature, and a diverse set of collective strategic problems, including biased voting,(More)
In this paper we present results of the numerical modelling of the temperature distribution in a GaAs-based, continuously optically pumped Vertical-External-Cavity Surface-Emitting-Laser, emitting at about 980 nm. Effectiveness of different methods of the temperature reduction in the active region, such as substrate thinning and using a heat spreader, is(More)
Comprehensive computer simulation has been used to investigate an impact of various possible structure modifications of the 1.3-µm oxide-confined GaAs-based GalnNAs quantum-well (QW) vertical-cavity surface-emission diode lasers (VCSELs) on their operation. In particular, an influence on various physical phenomena crucial for the VCSEL operation and(More)
Vertical-cavity surface-emitting diode lasers (VCSELs) exhibit excellent performance characteristic: they are principally single-longitudinal-mode devices and their circular optical beam is low divergent and without astigmatism. These virtues, however, are limited in standard VCSELs to relatively low outputs because of an excitation of higher-order(More)