Robert P. Sarzala

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In the talk a new automated and self-consistent approach to modeling photonic devices is presented. Is is based on a new software being developed at Lodz University of Technology and its main idea is automated consideration of mutual interactions between various physical phenomena taking place in photonic devices. The software consists of several solvers(More)
In the present paper the results of the computer analysis of the arsenide-based (GaInNAs/AlGaInAs) and antimonide-based (GaInAsSb/AlGaAsSb) active regions emitting in the mid-infrared wavelength region are presented. Quantum well material contents and strain dependencies on the maximal gain are investigated. It is shown that above 3 μm the maximal(More)
In the present paper, the comprehensive self-consistent VCSEL physical model is used to analyse excitation of successive transverse cavity modes in oxide-confined (OC) vertical-cavity surface-emitting diode lasers (VCSELs) using the double intra-cavity-contacted 5-λ-cavity double-quantum-well GaAs-based GaInNAs/GaAs OC VCSEL emitting the(More)
Paper presents results of our numerical simulation of an operation of the GaInNAs/GaAs vertical-external-cavity surface-emitting lasers (VECSELs) emitting the 1.3-μm radiation. Thermal properties of two various VECSEL assembly configurations have been compared with the aid of the finite-element-method model. Moreover, optical properties of resonant(More)
Comprehensive computer simulation has been used to investigate an impact of various possible structure modifications of the 1.3-µm oxide-confined GaAs-based GalnNAs quantum-well (QW) vertical-cavity surface-emission diode lasers (VCSELs) on their operation. In particular, an influence on various physical phenomena crucial for the VCSEL operation and(More)
This paper presents a comprehensive numerical study on the surface relief technique implemented in nitride Vertical-Cavity Surface-Emitting Laser (VCSEL) emitting in the 414-nm range. We calculated the threshold currents and optical modes in VCSEL structures with and without a surface relief. A standard structure was based on the first continuous-wave(More)
TuC1 Mode selectivity in oxide-confined vertical-cavity surface-emitting Diode lasers ThA1 Simulation of semiconductor modelocked ring lasers with monolithically integrated passive pulse shaping elements Erwin Bente Technical University of Eindhoven (Netherlands) ThB1 High-power semiconductor disk lasers Peter Brick Osram Opto Semiconductors (Germany) v
Vertical-cavity surface-emitting diode lasers (VCSELs) exhibit excellent performance characteristic: they are principally single-longitudinal-mode devices and their circular optical beam is low divergent and without astigmatism. These virtues, however, are limited in standard VCSELs to relatively low outputs because of an excitation of higher-order(More)
Three methods to obtain in GaAs-based oxide-confined GaInNAs/GaAs quantum-well (QW) VCSELs an efficient emission of the 1.3-µm radiation have been analysed and compared with the aid of the comprehensive fully self-consistent model. In the tuned VCSEL, QW composition (high N content) and thickness are selected to tune the 1.3-µm emission which(More)