—The once-ephemeral radiation-induced soft error has become a key threat to advanced commercial electronic components and systems. Left unchallenged, soft errors have the potential for inducing the highest failure rate of all other reliability mechanisms combined. This article briefly reviews the types of failure modes for soft errors, the three dominant… (More)
Radiation and Temperature Characterization results of a 2T-2C ferroelectric random access memory (FRAM) are presented. This includes Total Ionizing Dose (TID), Single Event Effects (SEE) and Temperature evaluation at 215 °C.
In this paper, a technique was proposed to protect memory cells, which are more susceptible to soft errors. These memory cells are to be protected with effective error correction codes. MLD codes are suitable for memory applications because of their ability to correct large number of errors. Conversely, they increase the average latency of the decoding… (More)