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—The once-ephemeral radiation-induced soft error has become a key threat to advanced commercial electronic components and systems. Left unchallenged, soft errors have the potential for inducing the highest failure rate of all other reliability mechanisms combined. This article briefly reviews the types of failure modes for soft errors, the three dominant… (More)
Radiation and Temperature Characterization results of a 2T-2C ferroelectric random access memory (FRAM) are presented. This includes Total Ionizing Dose (TID), Single Event Effects (SEE) and Temperature evaluation at 215 °C.
Thin films of LiNbO have been RF sputter deposited on silicon and sapphire substrates. A number of analytical techniques have been used to determine the physical structure of these films. This analysis shows that the resulting films are stoichiometric LiNbO(3) and oriented polycrystalline in nature. It is now possible to consider applications which utilize… (More)
Abstract- Single Events Effect (SEE) and Total Ionizing Dose (TID) results for a new Double Data Rate (DDR) linear voltage regulator are summarized, demonstrating robust SEE performance up to LETeff=65.1 MeV-cm2/mg and TID up to 100k Rads(Si).
The U.S. Food and Drug Administration (FDA) Performance Standard on Electrode Lead Wires and Patient Cables became mandatory for all relevant devices on May 9, 2000. The standard requires that any lead wire or patient cable that has contact, temporary or permanent, with a patient, should not allow the connection of the patient to the earth or possibly… (More)
In this paper, a technique was proposed to protect memory cells, which are more susceptible to soft errors. These memory cells are to be protected with effective error correction codes. MLD codes are suitable for memory applications because of their ability to correct large number of errors. Conversely, they increase the average latency of the decoding… (More)