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Abstract- Single Events Effect (SEE) and Total Ionizing Dose (TID) results for a new Double Data Rate (DDR) linear voltage regulator are summarized, demonstrating robust SEE performance up to LETeff=65.1 MeV-cm2/mg and TID up to 100k Rads(Si).
In this paper, a technique was proposed to protect memory cells, which are more susceptible to soft errors. These memory cells are to be protected with effective error correction codes. MLD codes are suitable for memory applications because of their ability to correct large number of errors. Conversely, they increase the average latency of the decoding(More)
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