Robert Boone

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Chemical-mechanical polishing (CMP) is an enabling technique used in deep-submicron VLSI manufacturing to achieve uniformity in long range oxide planarization [1]. Post-CMP oxide topography is highly related to local spatial pattern density in layout. To change local pattern density, and thus ensure post-CMP planarization, dummy features are placed in(More)
In this paper, we briefly describe the lithography developments known as RET (Resolution Enhancement Technologies),which include off-axis illumination in litho tools,Optical and Process Correction (OPC), and phase shifting masks (PSM). All of these techniques are adopted to allow ever smaller features to be reliably manufactured, and are being generally(More)
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