Bulk Acoustic Wave (BAW) devices have been researched for several decades with great promise and are now rapidly growing in the marketplace, migrating from the military and high-end industrial markets into consumer wireless applications. Although BAW devices can be fabricated for use below 500 MHZ, the economic sweet spot for BAW is above 1.5 GHz. At… (More)
RF-MEMS filters such as Bulk-Acoustic-Wave (BAW) filters are determined to replace conventional RF-filters in mobile communication as they have demonstrated performance and size advantages and can be manufactured at very low costs. Key performance parameters and requirements are discussed in detail. Two different approaches for RF-MEMS filters are reviewed… (More)
Multi-band/multi-system mobile phones require a complex RF-frontend architecture. Complexity has increased to a point where adding switches and whole signal branches for an additional band is no longer cost effective. Alternative concepts involve ‘converged’ power amplifiers and switching concepts supporting those. Filters and duplexers play a… (More)
: We report that porous silicon acoustic Bragg reflectors and AlN-based transducers can be successfully combined and processed in a commercial solidly mounted resonator production line. The resulting device takes advantage of the unique acoustic properties of porous silicon in order to form a monolithically integrated bulk acoustic wave resonator.
This paper presents a method for reconfiguring the bandwidth of Bulk Acoustic Wave (BAW) ladder filters by adding switchable inductors to their shunt resonators. Inductance values are controlled by selecting the number of turn in spiral inductor using micro-electro-mechanical (MEMS) switches. For this purpose, a MEMS inductor has been designed, fabricated… (More)