Robert A. Groves

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Foundation of rf CMOS and SiGe BiCMOS technologies This paper provides a detailed description of the IBM SiGe BiCMOS and rf CMOS technologies. The technologies provide high-performance SiGe heterojunction bipolar transistors (HBTs) combined with advanced CMOS technology and a variety of passive devices critical for realizing an integrated mixed-signal(More)
This paper expands the on-chip interconnect-aware methodology for high-speed analog and mixed signal design, presented in [4], into a wider class of designs, including dense layout CMOS design. The proposed solution employs a set of parameterized on-chip transmission line (T line) devices for the critical interconnects, which is expanded to include coplanar(More)
RF MOSFET modeling accounting for distributed substrate and channel resistance, " in IEDM Tech. A simple subcuircuit extension of the BSIM3v3 model for RF CMOS design, " Solid-State " An effective gate resistance model for CMOS RF and noise modeling, " in IEDM Tech. Impact of distributed gate resistance on the performance of MOS devices, " IEEE Tran.(More)
The purpose of this study was to determine optimal sets of b-values in diffusion-weighted MRI (DW-MRI) for obtaining monoexponential apparent diffusion coefficient (ADC) close to perfusion-insensitive intravoxel incoherent motion (IVIM) model ADC (ADCIVIM) in non-small cell lung cancer. Ten subjects had 40 DW-MRI scans before and during radiotherapy in a(More)
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