Robert A. Groves

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Foundation of rf CMOS and SiGe BiCMOS technologies This paper provides a detailed description of the IBM SiGe BiCMOS and rf CMOS technologies. The technologies provide high-performance SiGe heterojunction bipolar transistors (HBTs) combined with advanced CMOS technology and a variety of passive devices critical for realizing an integrated mixed-signal(More)
—This paper demonstrates a predictive noise parameter estimation methodology for UHV/CVD SiGe HBT's which combines ac measurement, calibrated ac simulation and two of the latest Y-parameter-based noise models: 1) the thermody-namic noise model, and 2) the SPICE noise model. The bias current and frequency dependence of the minimum noise figure, the optimum(More)
This paper expands the on-chip interconnect-aware methodology for high-speed analog and mixed signal design, presented in [4], into a wider class of designs, including dense layout CMOS design. The proposed solution employs a set of parameterized on-chip transmission line (T line) devices for the critical interconnects, which is expanded to include coplanar(More)
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