Riichiro Takaishi

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We demonstrate, for the first time, a CMOS compatible ferroelectric HfO<sub>2</sub>-based two-terminal non-volatile resistive switch; HfO<sub>2</sub> ferroelectric tunnel junction (FTJ). The device(More)
We successfully established the direct correspondence between the whole channel crystallinity at nm-scale and electrical property in one and the same poly-Si thin-film transistors (TFTs). A(More)
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