Richard Bytheway

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X-ray diffraction is one of the most widely applied methodologies for the in situ analysis of kinetic processes involving crystalline solids. However, due to its relatively high detection limit, it has only limited application in the context of crystallizations from liquids. Methods that can improve the detection limit of X-ray diffraction are therefore(More)
At the 32 nm technology node and beyond, strain engineering remains a critical approach for enhancing the performance of advanced logic devices. Selective epitaxial growth of SiGe into the source/drain regions of pMOS transistors is used to introduce uniaxial compressive strain the Si channel in order to improve the hole mobility. A similar approach using(More)
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